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Shadi Dayeh

TitleAssociate Researcher
InstitutionUniversity of California San Diego
DepartmentElectrical and Computer Engineering
Address9500 Gilman Drive #0407
La Jolla CA 92093
Phone858-534-5171
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    Publications listed below are automatically derived from MEDLINE/PubMed and other sources, which might result in incorrect or missing publications. Researchers can login to make corrections and additions, or contact us for help.
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    1. Hermiz J, Rogers N, Kaestner E, Ganji M, Cleary DR, Carter B, Barba D, Dayeh S, Halgren E, Gilja V. Sub-millimeter ECoG pitch in human enables higher fidelity cognitive neural state estimation. Neuroimage. 2018 Apr 17. PMID: 29678760.
      View in: PubMed
    2. Tanaka A, Choi W, Chen R, Dayeh SA. Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si. Adv Mater. 2017 Oct; 29(38). PMID: 28833605.
      View in: PubMed
    3. Kotekar-Patil D, Nguyen BM, Yoo J, Dayeh SA, Frolov SM. Quasiballistic quantum transport through Ge/Si core/shell nanowires. Nanotechnology. 2017 Sep 20; 28(38):385204. PMID: 28703121.
      View in: PubMed
    4. Chen R, Dayeh SA. Recordings and Analysis of Atomic Ledge and Dislocation Movements in InGaAs to Nickelide Nanowire Phase Transformation. Small. 2017 Aug; 13(30). PMID: 28597611.
      View in: PubMed
    5. Liu R, Chen R, Elthakeb AT, Lee SH, Hinckley S, Khraiche ML, Scott J, Pre D, Hwang Y, Tanaka A, Ro YG, Matsushita AK, Dai X, Soci C, Biesmans S, James A, Nogan J, Jungjohann KL, Pete DV, Webb DB, Zou Y, Bang AG, Dayeh SA. High Density Individually Addressable Nanowire Arrays Record Intracellular Activity from Primary Rodent and Human Stem Cell Derived Neurons. Nano Lett. 2017 May 10; 17(5):2757-2764. PMID: 28384403.
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    6. Kargar A, Sukrittanon S, Zhou C, Ro YG, Pan X, Dayeh SA, Tu CW, Jin S. GaP/GaNP Heterojunctions for Efficient Solar-Driven Water Oxidation. Small. 2017 Jun; 13(21). PMID: 28371293.
      View in: PubMed
    7. Chen R, Jungjohann KL, Mook WM, Nogan J, Dayeh SA. Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels. Nano Lett. 2017 Apr 12; 17(4):2189-2196. PMID: 28334533.
      View in: PubMed
    8. Uguz I, Ganji M, Hama A, Tanaka A, Inal S, Youssef A, Owens RM, Quilichini PP, Ghestem A, Bernard C, Dayeh SA, Malliaras GG. Autoclave Sterilization of PEDOT:PSS Electrophysiology Devices. Adv Healthc Mater. 2016 Dec; 5(24):3094-3098. PMID: 27885829.
      View in: PubMed
    9. Hermiz J, Rogers N, Kaestner E, Ganji M, Cleary D, Snider J, Barba D, Dayeh S, Halgren E, Gilja V. A clinic compatible, open source electrophysiology system. Conf Proc IEEE Eng Med Biol Soc. 2016 08; 2016:4511-4514. PMID: 28325009.
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    10. Shen Y, Chen R, Yu X, Wang Q, Jungjohann KL, Dayeh SA, Wu T. Gibbs-Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth. Nano Lett. 2016 Jul 13; 16(7):4158-65. PMID: 27254592.
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    11. Liu Y, Vishniakou S, Yoo J, Dayeh SA. Engineering Heteromaterials to Control Lithium Ion Transport Pathways. Sci Rep. 2015 Dec 21; 5:18482. PMID: 26686655; PMCID: PMC4685276.
    12. Tanaka A, Chen R, Jungjohann KL, Dayeh SA. Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire. Sci Rep. 2015 Nov 27; 5:17314. PMID: 26611405; PMCID: PMC4661445.
    13. Nguyen BM, Swartzentruber B, Ro YG, Dayeh SA. Facet-Selective Nucleation and Conformal Epitaxy of Ge Shells on Si Nanowires. Nano Lett. 2015 Nov 11; 15(11):7258-64. PMID: 26447652.
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    14. Yoo J, Nguyen BM, Campbell IH, Dayeh SA, Schuele P, Evans D, Picraux ST. Si Radial p-i-n Junction Photovoltaic Arrays with Built-In Light Concentrators. ACS Nano. 2015 May 26; 9(5):5154-63. PMID: 25961330.
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    15. Chen R, Dayeh SA. Size and Orientation Effects on the Kinetics and Structure of Nickelide Contacts to InGaAs Fin Structures. Nano Lett. 2015 Jun 10; 15(6):3770-9. PMID: 25879390.
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    16. Shen M, Han A, Wang X, Ro YG, Kargar A, Lin Y, Guo H, Du P, Jiang J, Zhang J, Dayeh SA, Xiang B. Atomic scale analysis of the enhanced electro- and photo-catalytic activity in high-index faceted porous NiO nanowires. Sci Rep. 2015 Feb 24; 5:8557. PMID: 25707903; PMCID: PMC4338422.
    17. Yoo J, Dayeh SA, Bartelt NC, Tang W, Findikoglu AT, Picraux ST. Size-dependent silicon epitaxy at mesoscale dimensions. Nano Lett. 2014 Nov 12; 14(11):6121-6. PMID: 25315228.
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    18. Yang L, Cui X, Zhang J, Wang K, Shen M, Zeng S, Dayeh SA, Feng L, Xiang B. Lattice strain effects on the optical properties of MoS2 nanosheets. Sci Rep. 2014 Jul 10; 4:5649. PMID: 25008782; PMCID: PMC4090623.
    19. Yang L, Zhong D, Zhang J, Yan Z, Ge S, Du P, Jiang J, Sun D, Wu X, Fan Z, Dayeh SA, Xiang B. Optical properties of metal-molybdenum disulfide hybrid nanosheets and their application for enhanced photocatalytic hydrogen evolution. ACS Nano. 2014 Jul 22; 8(7):6979-85. PMID: 24884001.
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    20. Nguyen BM, Taur Y, Picraux ST, Dayeh SA. Diameter-independent hole mobility in Ge/Si core/shell nanowire field effect transistors. Nano Lett. 2014 Feb 12; 14(2):585-91. PMID: 24382113.
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    21. Tang W, Picraux ST, Huang JY, Liu X, Tu KN, Dayeh SA. Gold catalyzed nickel disilicide formation: a new solid-liquid-solid phase growth mechanism. Nano Lett. 2013; 13(12):6009-15. PMID: 24274698.
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    22. Liu Y, Liu XH, Nguyen BM, Yoo J, Sullivan JP, Picraux ST, Huang JY, Dayeh SA. Tailoring lithiation behavior by interface and bandgap engineering at the nanoscale. Nano Lett. 2013 Oct 09; 13(10):4876-83. PMID: 24000810.
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    23. Jeon N, Dayeh SA, Lauhon LJ. Origin of polytype formation in VLS-grown Ge nanowires through defect generation and nanowire kinking. Nano Lett. 2013 Aug 14; 13(8):3947-52. PMID: 23898822.
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    24. Tang W, Picraux ST, Huang JY, Gusak AM, Tu KN, Dayeh SA. Nucleation and atomic layer reaction in nickel silicide for defect-engineered Si nanochannels. Nano Lett. 2013 Jun 12; 13(6):2748-53. PMID: 23713768.
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    25. Zhang S, Dayeh SA, Li Y, Crooker SA, Smith DL, Picraux ST. Electrical spin injection and detection in silicon nanowires through oxide tunnel barriers. Nano Lett. 2013 Feb 13; 13(2):430-5. PMID: 23324028.
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    26. Wang B, Li X, Zhang X, Luo B, Jin M, Liang M, Dayeh SA, Picraux ST, Zhi L. Adaptable silicon-carbon nanocables sandwiched between reduced graphene oxide sheets as lithium ion battery anodes. ACS Nano. 2013 Feb 26; 7(2):1437-45. PMID: 23281801.
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    27. Seo MA, Yoo J, Dayeh SA, Picraux ST, Taylor AJ, Prasankumar RP. Mapping carrier diffusion in single silicon core-shell nanowires with ultrafast optical microscopy. Nano Lett. 2012 Dec 12; 12(12):6334-8. PMID: 23130749.
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    28. Le ST, Jannaty P, Luo X, Zaslavsky A, Perea DE, Dayeh SA, Picraux ST. Axial SiGe heteronanowire tunneling field-effect transistors. Nano Lett. 2012 Nov 14; 12(11):5850-5. PMID: 23113718.
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    29. Dayeh SA, Tang W, Boioli F, Kavanagh KL, Zheng H, Wang J, Mack NH, Swadener G, Huang JY, Miglio L, Tu KN, Picraux ST. Direct measurement of coherency limits for strain relaxation in heteroepitaxial core/shell nanowires. Nano Lett. 2013 May 08; 13(5):1869-76. PMID: 23030346.
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    30. Liu XH, Wang JW, Huang S, Fan F, Huang X, Liu Y, Krylyuk S, Yoo J, Dayeh SA, Davydov AV, Mao SX, Picraux ST, Zhang S, Li J, Zhu T, Huang JY. In situ atomic-scale imaging of electrochemical lithiation in silicon. Nat Nanotechnol. 2012 Nov; 7(11):749-56. PMID: 23042490.
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    31. Tang W, Dayeh SA, Picraux ST, Huang JY, Tu KN. Ultrashort channel silicon nanowire transistors with nickel silicide source/drain contacts. Nano Lett. 2012 Aug 08; 12(8):3979-85. PMID: 22731955.
      View in: PubMed
    32. Mohite AD, Perea DE, Singh S, Dayeh SA, Campbell IH, Picraux ST, Htoon H. Highly efficient charge separation and collection across in situ doped axial VLS-grown Si nanowire p-n junctions. Nano Lett. 2012 Apr 11; 12(4):1965-71. PMID: 22432793.
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    33. Dai X, Dayeh SA, Veeramuthu V, Larrue A, Wang J, Su H, Soci C. Tailoring the vapor-liquid-solid growth toward the self-assembly of GaAs nanowire junctions. Nano Lett. 2011 Nov 09; 11(11):4947-52. PMID: 21967168.
      View in: PubMed
    34. Dayeh SA, Wang J, Li N, Huang JY, Gin AV, Picraux ST. Growth, defect formation, and morphology control of germanium-silicon semiconductor nanowire heterostructures. Nano Lett. 2011 Oct 12; 11(10):4200-6. PMID: 21877708.
      View in: PubMed
    35. Liu XH, Zheng H, Zhong L, Huang S, Karki K, Zhang LQ, Liu Y, Kushima A, Liang WT, Wang JW, Cho JH, Epstein E, Dayeh SA, Picraux ST, Zhu T, Li J, Sullivan JP, Cumings J, Wang C, Mao SX, Ye ZZ, Zhang S, Huang JY. Anisotropic swelling and fracture of silicon nanowires during lithiation. Nano Lett. 2011 Aug 10; 11(8):3312-8. PMID: 21707052.
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    36. Liu XH, Zhang LQ, Zhong L, Liu Y, Zheng H, Wang JW, Cho JH, Dayeh SA, Picraux ST, Sullivan JP, Mao SX, Ye ZZ, Huang JY. Ultrafast electrochemical lithiation of individual Si nanowire anodes. Nano Lett. 2011 Jun 08; 11(6):2251-8. PMID: 21563798.
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    37. Dayeh SA, Picraux ST. Direct observation of nanoscale size effects in Ge semiconductor nanowire growth. Nano Lett. 2010 Oct 13; 10(10):4032-9. PMID: 20853864.
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    38. Sierra-Sastre Y, Dayeh SA, Picraux ST, Batt CA. Epitaxy of Ge nanowires grown from biotemplated Au nanoparticle catalysts. ACS Nano. 2010 Feb 23; 4(2):1209-17. PMID: 20128609.
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    39. Raychaudhuri S, Dayeh SA, Wang D, Yu ET. Precise semiconductor nanowire placement through dielectrophoresis. Nano Lett. 2009 Jun; 9(6):2260-6. PMID: 19419157.
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    40. Dayeh SA, Yu ET, Wang D. Surface diffusion and substrate-nanowire adatom exchange in InAs nanowire growth. Nano Lett. 2009 May; 9(5):1967-72. PMID: 19397297.
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    41. Dayeh SA, Yu ET, Wang D. Transport coefficients of InAs nanowires as a function of diameter. Small. 2009 Jan; 5(1):77-81. PMID: 19040215.
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    42. Bao XY, Soci C, Susac D, Bratvold J, Aplin DP, Wei W, Chen CY, Dayeh SA, Kavanagh KL, Wang D. Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition. Nano Lett. 2008 Nov; 8(11):3755-60. PMID: 18954121.
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    43. Dayeh SA, Susac D, Kavanagh KL, Yu ET, Wang D. Field dependent transport properties in InAs nanowire field effect transistors. Nano Lett. 2008 Oct; 8(10):3114-9. PMID: 18783282.
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    44. Dayeh SA, Yu ET, Wang D. Excess indium and substrate effects on the growth of InAs nanowires. Small. 2007 Oct; 3(10):1683-7. PMID: 17806087.
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    45. Dayeh SA, Yu ET, Wang D. III-V nanowire growth mechanism: V/III ratio and temperature effects. Nano Lett. 2007 Aug; 7(8):2486-90. PMID: 17608541.
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    46. Soci C, Zhang A, Xiang B, Dayeh SA, Aplin DP, Park J, Bao XY, Lo YH, Wang D. ZnO nanowire UV photodetectors with high internal gain. Nano Lett. 2007 Apr; 7(4):1003-9. PMID: 17358092.
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    47. Xiang B, Wang P, Zhang X, Dayeh SA, Aplin DP, Soci C, Yu D, Wang D. Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical vapor deposition. Nano Lett. 2007 Feb; 7(2):323-8. PMID: 17297995.
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    48. Dayeh SA, Aplin DP, Zhou X, Yu PK, Yu ET, Wang D. High electron mobility InAs nanowire field-effect transistors. Small. 2007 Feb; 3(2):326-32. PMID: 17199246.
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