Ashwani Kumar

Title(s)Postdoctoral Scholar, Electrical and Computer Engineering
SchoolVc-academic Affairs
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    Dr. Ashwani Kumar is currently working as postdoctoral researcher in ‘Neuroelectronics Lab’ at university of California San Diego, CA, USA.
    His current research interests include development and utilization of Memristive (RRAM) technologies for hybrid (CMOS + RRAM) circuits for applications like neuromorphic-hardware, on-sensor visual data computation, in-memory computation etc. His research primarily focuses on multidisciplinary approaches to examine the nature of various emerging RRAM devices, e.g., OxRAM / RRAM / Memristor, OTPM, and STT-MRAM. He implemented several device-circuit level computing strategies and hybrid architectures involving standard CMOS technologies and RRAM elements for applications like in-memory computing, hardware security, and on/near sensor computation.
    Dr. Ashwani has more than seven years of experience in the field RRAM devices and development of hybrid CMOS+RRAM circuits. He has also successfully collaborated and worked with several international research groups from CNRS -France, NCTU -Taiwan, IIT Delhi -India, IIT Bombay -India, etc. He also handled the collaboration with foundries like Semiconductor Laboratory Chandigarh -India,’ and CEA LETI - France for fabricating hybrid circuits.

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    1. Evaluation of fluxon synapse device based on superconducting loops for energy efficient neuromorphic computing. Front Neurosci. 2025; 19:1511371. Kumar A, Goteti US, Cubukcu E, Dynes RC, Kuzum D. PMID: 40027464; PMCID: PMC11868091.
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    2. Multi-level, forming and filament free, bulk switching trilayer RRAM for neuromorphic computing at the edge. Nat Commun. 2024 Apr 25; 15(1):3492. Park J, Kumar A, Zhou Y, Oh S, Kim JH, Shi Y, Jain S, Hota G, Qiu E, Nagle AL, Schuller IK, Schuman CD, Cauwenberghs G, Kuzum D. PMID: 38664381; PMCID: PMC11045755.
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